Toshiba - TOLD320B

LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1553;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 790;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Peak Wavelength (nm): 1543; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Peak Wavelength (nm): 1565; Maximum Forward Current: .01 A; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 685; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 783; Maximum Forward Current: .135 A; Maximum Operating Temperature: 60 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 790; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 40 Cel; Maximum Forward Current: .11 A; Peak Wavelength (nm): 635; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Maximum Threshold Current: 65 mA; Nominal Output Power: 7 W; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; No. of Functions: 1; Size: 1.8 mm;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1560;

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1586; Maximum Forward Current: .3 A;

LASER DIODE; Spectral Bandwidth: 15 m; Peak Wavelength (nm): 1625; Maximum Forward Current: 1.2 A; Maximum Response Time: .000000002 s; Minimum Operating Temperature: -20 Cel;

LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1536; Maximum Forward Voltage: 2 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .095 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 810;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1567;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1546; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel;