Renesas Electronics - NR6300EZ-AZ

The Vishay Intertechnology BPW24R is a 4mm PIN photodiode with peak wavelength of 900nm. It operates b/w -40°C to 125°C, has a reverse breakdown voltage of 60V, and response time of 0.000000007s. Ideal for IR applications, it features through hole mounting and offers nominal light current of 0.06mA.

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Additional Features: HIGH RELIABILITY, LOW NOISE; Minimum Reverse Breakdown Voltage: 10 V; Minimum Operating Temperature: -40 Cel;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 7 nA; Semiconductor Material: Silicon; JESD-609 Code: e0;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Peak Wavelength (nm): 950; Maximum Operating Temperature: 100 Cel; Additional Features: DAY LIGHT FILTER, HIGH SENSITIVITY;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .0000000008 s; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Germanium; Maximum Dark Current: 500 nA;

Photo Diodes;

BPW34 by Vishay Intertechnology is a 3mm square PIN photodiode with a peak wavelength of 900nm. It has a max operating temperature of 100°C and a min reverse breakdown voltage of 60V. This photodiode is commonly used in applications requiring infrared detection and can be mounted through hole.

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 10 nA; Maximum Reverse Voltage: 30 V;

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000001 s; JESD-609 Code: e0;

Vishay Intertechnology's VEMD2523X01 is a single PIN photodiode with peak wavelength of 900nm. It operates b/w -40 to 100°C, has reverse breakdown voltage of 32V, and max reverse voltage of 60V. Ideal for infrared applications, it features nominal light current of 0.01mA and max dark current of 10nA.

PIN PHOTODIODE; Shape: RECTANGULAR; Maximum Dark Current: 30 nA; Configuration: SINGLE; Peak Wavelength (nm): 870; Nominal Light Current: .04 mA;

Photo Diodes; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -30 Cel; Maximum Reverse Voltage: 32 V; Maximum Response Time: .00000012 s;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Reverse Breakdown Voltage: 24.2 V; Minimum Operating Temperature: -40 Cel; Packing Method: TR; Additional Features: LOW NOISE;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Reverse Breakdown Voltage: 24.2 V; Size: 6 mm; Semiconductor Material: Silicon; Maximum Operating Temperature: 85 Cel;

Photo Diodes;

AVALANCHE PHOTODIODE; Mounting Feature: RADIAL MOUNT; Configuration: SINGLE; Size: 5.8 mm; Shape: SQUARE; Maximum Operating Temperature: 100 Cel;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000008 s; Semiconductor Material: Germanium; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 45 V;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 50 V; Maximum Response Time: .000000045 s; Semiconductor Material: Silicon; Minimum Operating Temperature: -60 Cel;

MICROFC-30035-SMT-TR1 by Onsemi is a 3 mm square avalanche photodiode with a peak wavelength of 420 nm. It has a max operating temperature of 85°C and a min reverse breakdown voltage of 24.2 V. This photodiode is suitable for applications requiring high sensitivity in low light conditions, such as optical communication systems or medical imaging devices.