NXP Semiconductors - 2N5484-AMMO

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Qualification: Not Qualified; Terminal Finish: TIN LEAD;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Terminal Form: FLAT;

N-CHANNEL; Maximum Power Dissipation Ambient: .2 W; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .03 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JEDEC-95 Code: TO-236AB; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Terminals: 3; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Operating Mode: DEPLETION MODE; Maximum Feedback Capacitance (Crss): 3 pF;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Transistor Application: AMPLIFIER; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-30 Code: R-PDSO-G4; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .01 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 30 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-T3; Package Style (Meter): CYLINDRICAL;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 20 V; Terminal Position: DUAL;