Onsemi - NSVF6003SB6T1G

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NSVF6003SB6T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVF6003SB6T1G
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .15 A;
Datasheet NSVF6003SB6T1G Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 6
Maximum Power Dissipation (Abs): .8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e6
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 12 V
Maximum Collector-Base Capacitance: 2 pF
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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