Onsemi - MICROFC-60035-SMT-TR

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Silicon; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: .15 nA; Maximum Reverse Voltage: 120 V;

AVALANCHE PHOTODIODE;

TEMD5110X01 by Vishay Intertechnology is a single configuration photodiode with a peak wavelength of 940 nm. It operates at temperatures ranging from -40 to 100 °C and has a min reverse breakdown voltage of 60 V. This rectangular-shaped PIN photodiode is suitable for applications requiring infrared detection in surface mount installations.

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 50 V; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .00000003 s; Maximum Dark Current: 5 nA;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 2 nA; Maximum Reverse Voltage: 20 V; Semiconductor Material: Silicon;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 100 Cel; Semiconductor Material: Silicon; Maximum Reverse Voltage: 30 V;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Shape: ROUND; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Germanium;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Size: 1.78 mm; Infrared (IR) Range: YES; JESD-609 Code: e3; Configuration: SINGLE;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 30 nA;

Osram Opto Semiconductors' BPW34FAS-Z is a PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 16V. Sized at 2.65mm, it's ideal for infrared applications due to its low dark current and nominal light current of 0.023mA.

PIN PHOTODIODE; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN NICKEL; Size: 1 mm; Infrared (IR) Range: YES; Maximum Operating Temperature: 100 Cel;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 200 nA; Semiconductor Material: Germanium;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000001 s; Maximum Dark Current: 3 nA;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .015 mA; No. of Functions: 2; Maximum Dark Current: 100 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Peak Wavelength (nm): 880; Maximum Response Time: .00000001 s;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 85 Cel;

AVALANCHE PHOTODIODE;

AVALANCHE PHOTODIODE;