Onsemi - 3SK167

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-92; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .33 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): .03 pF;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .04 A; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .01 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Form: GULL WING;

RF Small Signal Field-Effect Transistors;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Finish: TIN LEAD; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE;

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; JESD-609 Code: e0;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-609 Code: e0; Package Body Material: PLASTIC/EPOXY;

RF Small Signal Field-Effect Transistors;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .03 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Drain Current (ID): 6 A; Maximum Operating Temperature: 175 Cel;