NXP Semiconductors - 934061588215

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-609 Code: e0; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G4; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 200 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .015 A; Field Effect Transistor Technology: JUNCTION; Terminal Form: WIRE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Terminal Finish: Tin (Sn);

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 20 dB; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 2; Operating Mode: DUAL GATE, DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): .03 pF;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Maximum Feedback Capacitance (Crss): .03 pF;

ATF-55143-TR1G by Broadcom is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a max drain current of 0.1 A, operating at up to 150°C with a power dissipation of 0.27 W in a small outline package suitable for surface mount assembly.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-F6; Maximum Drain Current (Abs) (ID): .03 A;

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Drain Current (ID): 6 A; Maximum Operating Temperature: 175 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Application: AMPLIFIER; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JEDEC-95 Code: TO-92; No. of Elements: 1;

N-CHANNEL; Maximum Drain Current (ID): .055 A; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .055 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Terminals: 4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Minimum Power Gain (Gp): 15 dB;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .725 W; Transistor Element Material: GALLIUM ARSENIDE; Case Connection: SOURCE;