NXP Semiconductors - RZ1214B65YTRAY

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Case Connection: BASE; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 20;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 2.1 A; Package Style (Meter): FLANGE MOUNT;

RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Transistor Application: AMPLIFIER; Maximum Collector-Emitter Voltage: 15 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Additional Features: WITH EMITTER BALLASTING RESISTORS; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 175 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; JESD-30 Code: O-CRDB-F2; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.2 W; Maximum Collector Current (IC): .25 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Transistor Application: AMPLIFIER;

The NXP Semiconductors BLT50,115 is a RF Power BJT transistor with NPN polarity and single configuration. It features a min power gain of 10 dB, operates in the ultra high frequency band, and has a max power dissipation of 2 W. Ideal for amplifier applications, this transistor has a max operating temperature of 175°C and can handle a collector current of 0.5 A.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17 W; Maximum Collector Current (IC): 1.25 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): 1 A; Package Style (Meter): POST/STUD MOUNT;