NXP Semiconductors - RX1214B170Y

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.6 W; Maximum Collector Current (IC): .5 A; Package Shape: ROUND;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 7.4 A; JESD-30 Code: R-CDFM-F4;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 315 MHz; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 850 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 16 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Package Shape: ROUND; Minimum Power Gain (Gp): 8.1 dB;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT; Qualification: Not Qualified;

NPN; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 18 V; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; No. of Elements: 1; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 8;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Package Style (Meter): FLANGE MOUNT; Minimum Power Gain (Gp): 12 dB;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): .85 A; Maximum Collector-Emitter Voltage: 25 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .3 A;

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 9 A; Transistor Application: AMPLIFIER;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-CDFM-F2;