New Jersey Semiconductor Products - 2N6080

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 28 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 18 V;

NPN; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Package Shape: RECTANGULAR; No. of Terminals: 2; JESD-30 Code: R-CDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 4.5 A; Transistor Element Material: SILICON;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .1 A;

RF Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 15 A; JESD-30 Code: R-CDFP-F2;

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 25 A; Maximum Power Dissipation Ambient: 350 W;

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 32 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2200 W; Maximum Collector Current (IC): 52.5 A; Transistor Element Material: SILICON;

RF Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL;