NXP Semiconductors - MRF899

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 22 A; Qualification: Not Qualified; JESD-30 Code: S-PDFM-F2;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 470 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; JESD-30 Code: R-PDFM-F8; Additional Features: DIFFUSED EMITTER BALLAST RESISTOR;

NPN; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; No. of Elements: 1; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Maximum Power Dissipation Ambient: 50 W; Maximum Collector-Emitter Voltage: 28 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 2.5 A; Minimum Power Gain (Gp): 6 dB;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Position: DUAL; Qualification: Not Qualified;

1090MP by Microsemi is a NPN RF Power BJT with a max power dissipation of 250W. It operates in L Band frequencies and has a max collector current of 6.5A, making it ideal for amplifier applications in various industries. This transistor comes in a ceramic-metal sealed co-fired package with flat terminals, suitable for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 1.2 A; Maximum Operating Temperature: 175 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): POST/STUD MOUNT; Case Connection: ISOLATED;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 28 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;