Maxim Integrated - MAX2601ESA

NPN; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 3 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 35 V; Transistor Element Material: SILICON;

RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 315 MHz; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Terminal Form: FLAT; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

RF Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 12 A; Minimum DC Current Gain (hFE): 40;

NPN; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Transistor Application: AMPLIFIER; No. of Elements: 1;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Collector-Emitter Voltage: 28 V;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .75 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): POST/STUD MOUNT; Case Connection: ISOLATED;

1090MP by Microsemi is a NPN RF Power BJT with a max power dissipation of 250W. It operates in L Band frequencies and has a max collector current of 6.5A, making it ideal for amplifier applications in various industries. This transistor comes in a ceramic-metal sealed co-fired package with flat terminals, suitable for surface mount assembly.

RF Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Power Dissipation (Abs): 8.33 W; Maximum Collector Current (IC): .35 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Highest Frequency Band: L BAND; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): .75 A; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;