NXP Semiconductors - CQF25B/D14

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1605; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Forward Current: .11 A; Maximum Operating Temperature: 60 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 810; Minimum Operating Temperature: -10 Cel; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 80 Cel; Semiconductor Material: InGaAs;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP; Peak Wavelength (nm): 640; Maximum Operating Temperature: 40 Cel;

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1535; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1330; Minimum Operating Temperature: -40 Cel; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1605; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 635; Maximum Forward Current: .08 A; Maximum Operating Temperature: 40 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1529; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 875; Minimum Operating Temperature: -10 Cel; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1558;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 785; Maximum Forward Current: .1 A; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s;

LASER DIODE; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000000000125 s; Maximum Forward Current: .1 A; Peak Wavelength (nm): 1590; Minimum Operating Temperature: -20 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 780;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 941; Maximum Operating Temperature: 60 Cel;