Renesas Electronics - NX8570SC6087Q-BA

  1. Home
  2. Renesas Electronics - NX8570SC6087Q-BA
NX8570SC6087Q-BA by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8570SC6087Q-BA
Description LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
Datasheet NX8570SC6087Q-BA Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .3 A
Maximum Operating Temperature: 70 Cel
Semiconductor Material: InGaAsP
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2.5 V
Minimum Operating Temperature: -5 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TOLD133 by Toshiba

TOLD133

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Peak Wavelength (nm): 830; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;
TOLD320CBB by Toshiba

TOLD320CBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;
NX8567SAS393-BC by Renesas Electronics

NX8567SAS393-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1539; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel;
NX8567SAM449-BC by Renesas Electronics

NX8567SAM449-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1544; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel;
TOLD323CAC by Toshiba

TOLD323CAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V;
TOLD9443MD by Toshiba

TOLD9443MD

Toshiba

LASER DIODE; Maximum Threshold Current: 65 mA; Nominal Output Power: 10 W; No. of Functions: 1; Peak Wavelength (nm): 650; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;
NX8501CG-BA by Renesas Electronics

NX8501CG-BA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1510; Minimum Operating Temperature: 0 Cel;
SDL5033-001 by Onsemi

SDL5033-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 875; Maximum Operating Temperature: 50 Cel; Semiconductor Material: GaAlAs;
Q65113A2191 by Osram Opto Semiconductors

Q65113A2191

Osram Opto Semiconductors

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 4.5 V; Maximum Operating Temperature: 85 Cel; Packing Method: TR, 7 INCH; Maximum Threshold Current: 900 mA;
NX8570SC6061-BA-AZ by Renesas Electronics

NX8570SC6061-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1606; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel;
TOLD135 by Toshiba

TOLD135

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Forward Current: .115 A; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;
STH61004Z by Infineon Technologies

STH61004Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1300; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel;
TOLD321CBC by Toshiba

TOLD321CBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 70 Cel;
SDL7033-101 by Onsemi

SDL7033-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 875;
NX8570SC437-BA-AZ by Renesas Electronics

NX8570SC437-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1543; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
Q65112A6166 by Osram Opto Semiconductors

Q65112A6166

Osram Opto Semiconductors

LASER DIODE; Terminal Finish: GOLD; Peak Wavelength (nm): 905; JESD-609 Code: e4; Shape: RECTANGULAR; No. of Functions: 1;
TOLD360 by Toshiba

TOLD360

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1550; Maximum Response Time: .0000000003 s; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V;
NX8566LE533-CC by Renesas Electronics

NX8566LE533-CC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1553;
TOLD9410(S) by Toshiba

TOLD9410(S)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 650; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 40 Cel;
NDL7405PD by Renesas Electronics

NDL7405PD

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .075 A; Maximum Forward Voltage: 1.5 V;