NXP Semiconductors - BLV950

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 825 MHz; Maximum Collector Current (IC): 2.75 A; Minimum DC Current Gain (hFE): 10;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum DC Current Gain (hFE): 40;

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 15 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 2.5 A; Highest Frequency Band: L BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Terminal Position: DUAL; Terminal Form: FLAT;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 2.5 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; JESD-30 Code: O-CXFM-F6;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; JESD-30 Code: O-PRFM-F4; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1.4 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: O-PRFM-F4;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 108 MHz; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 16 A;

NPN; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 18 V; No. of Elements: 1;

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 28 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Minimum DC Current Gain (hFE): 10; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Qualification: Not Qualified; Transistor Element Material: SILICON;

PNP; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-CRPM-F4; Package Shape: ROUND; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;