NXP Semiconductors - BLU56-T

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 16 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): 1 A; Maximum Power Dissipation Ambient: 23 W;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 9 A; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Package Style (Meter): FLANGE MOUNT;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 875 W; Maximum Collector Current (IC): 22 A; Minimum DC Current Gain (hFE): 10;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-CDFM-F2; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.6 A; Package Shape: RECTANGULAR; Case Connection: BASE;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 20 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

NPN; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER; No. of Terminals: 6;

MS2209 by Microsemi is a NPN BJT transistor with 7A IC, suitable for L Band applications. It has a ceramic-metal-sealed co-fired package and operates at max temp of 200°C. Ideal for amplifier circuits due to its single configuration and square package shape.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 3.5 A; JESD-30 Code: R-CDFM-F6;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 4.5 A; JESD-30 Code: O-PRFM-F4;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; No. of Terminals: 3;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 720 W; Maximum Collector Current (IC): 19.8 A; Case Connection: BASE;