NXP Semiconductors - 2N3632

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 5.7 A; Highest Frequency Band: S BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): 1 A; Package Style (Meter): POST/STUD MOUNT;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Qualification: Not Qualified; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Collector Current (IC): 4 A; Maximum Collector-Base Capacitance: 28 pF;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 18 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Shape: RECTANGULAR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): SMALL OUTLINE;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; Minimum Power Gain (Gp): 10.5 dB;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-CDFM-F4; JESD-609 Code: e3;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL; Transistor Element Material: SILICON;

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum Operating Temperature: -55 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2700 MHz; Maximum Collector Current (IC): .35 A; Terminal Position: BOTTOM;

RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED; No. of Elements: 1;