Tyco Electronics M/a-com - MRF137

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 150 Cel;

CGH40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND, featuring HIGH ELECTRON MOBILITY GaN technology. This amplifier transistor has a max temperature of 105°C and comes in a RECTANGULAR package for surface mount applications.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: FLAT; Highest Frequency Band: S BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 648 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 40 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Maximum Drain Current (ID): 5 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: AMPLIFIER; No. of Terminals: 2;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: ROUND;

RF Power Field-Effect Transistors;