NXP Semiconductors - AFT05MP075NR1

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Maximum Time At Peak Reflow Temperature (s): 40; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 200 Cel; No. of Terminals: 2; Maximum Drain Current (ID): 5 A;

The NXP Semiconductors MW6S004NT1 is a single N-channel RF Power FET with a 68V DS breakdown voltage. It operates in enhancement mode, suitable for amplifier applications in the L band. This transistor features a small outline package, metal-oxide semiconductor technology, and can withstand temperatures up to 150°C.

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 18 A; No. of Terminals: 4; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 29 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 65 V;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

FLU35XM by Fujitsu is a N-CHANNEL RF FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for L BAND applications, it features 15W Power Dissipation, GALLIUM ARSENIDE technology, and can withstand up to 175°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 625 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: SOURCE;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;