National Semiconductor - LMV221SDX/NOPB

NARROW BAND LOW POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; Maximum Operating Temperature: 85 Cel;

HMC499LC4 by Analog Devices is a ceramic-packaged RF amplifier with a wide band medium power capability. It operates at frequencies ranging from 21 GHz to 32 GHz, providing a gain of 9 dB. This component is suitable for surface mount applications and can handle a max input power of 20 dBm.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Gain: 9 dB;

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Matte Tin (Sn); Power Supplies (V): 3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Maximum Voltage Standing Wave Ratio: 1.6; Minimum Operating Temperature: -40 Cel;

The Mini-circuits PMA3-83LN+ is a wide band low power RF amplifier with a gain of 19.9 dB, suitable for frequencies ranging from 500 MHz to 8000 MHz. It can handle a max input power of 16 dBm and operates in temperatures from -40°C to 105°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Gain: 10 dB; Maximum Operating Frequency: 18000 MHz; Terminal Finish: GOLD OVER NICKEL; Minimum Operating Temperature: -40 Cel; Construction: COMPONENT;

WIDE BAND LOW POWER; Maximum Input Power (CW): 22 dBm; Minimum Operating Frequency: 0 MHz; Terminal Finish: GOLD OVER NICKEL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 40000 MHz;