NXP Semiconductors - 934064613115

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Minimum DC Current Gain (hFE): 40;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: MATTE TIN;

NSVMMBTH81LT3G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high frequency band up to 600 MHz with a max VCEsat of 0.5 V. This small outline package has a max collector-emitter voltage of 20V and can handle a collector current of 0.05A, making it suitable for RF signal amplification in various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): .6 A;

The NXP Semiconductors BFU590GX is a RF Small Signal BJT transistor with NPN polarity. It has a max operating temperature of 150°C and can handle a max collector-emitter voltage of 12V. This transistor is commonly used in amplifiers for L Band applications.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Collector Current (IC): .08 A; Reference Standard: AEC-Q101;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;

BFP640FH6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for C Band applications. It has a max fT of 40 GHz, 0.05 A IC, and 4 V VCE. This transistor is designed for high-frequency amplifier circuits in automotive electronics.

NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1600 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .425 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; No. of Terminals: 3; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 20 V; Transistor Element Material: SILICON;

The NXP Semiconductors BFU520XRVL is a RF Small Signal BJT transistor with NPN polarity. It is designed for amplifier applications in the L Band frequency range, with a max operating temperature of 150°C and a min DC current gain of 60 (hFE). This surface mount transistor has a rectangular package shape and four terminals.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .05 A; JEDEC-95 Code: TO-72;

RF Small Signal Bipolar Transistors;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 690 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: THROUGH-HOLE;