Integrated Device Technology - HFA3127BZ

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; JEDEC-95 Code: TO-39;

MMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max operating temp of 150°C. It has a transition frequency of 650 MHz and a collector-emitter voltage of 25V, making it ideal for ultra-high frequency amplifier applications in small outline packages.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): .025 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Package Style (Meter): SMALL OUTLINE;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

NPN; Surface Mount: NO; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .425 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Package Body Material: PLASTIC/EPOXY; Maximum Collector-Emitter Voltage: 15 V;

HFA3101BZ96 by Renesas Electronics is an NPN bipolar junction transistor (BJT) designed for amplifier applications in the ultra high frequency band. With a max operating temperature of 150°C and a max collector-emitter voltage of 8V, it offers a nominal transition frequency of 10,000 MHz.

Infineon's BFP420H6327XTSA1 is an NPN RF BJT transistor with a max fT of 25 GHz. It is ideal for X Band applications, featuring a max VCE of 4.5V and IC of 0.035A. The transistor operates in temperatures as low as -65°C and complies with AEC-Q101 standards.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector-Emitter Voltage: 20 V; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; JEDEC-95 Code: TO-92; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector-Base Capacitance: 1.7 pF;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .02 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;