NXP Semiconductors - 934056583112

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Highest Frequency Band: S BAND; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; No. of Elements: 1;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 289 W; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

GS61008T-TR by Gan Systems is a N-channel RF FET with 100V DS breakdown voltage, ideal for switching applications. Operating in enhancement mode, it offers 90A ID and operates at -55°C. Utilizing GaN technology, it features a plastic/epoxy package and is surface mountable for very high frequency band applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 165 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 200 Cel; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.7 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JESD-30 Code: R-CDFM-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Maximum Drain Current (ID): 5 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 108 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Finish: GOLD OVER NICKEL; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (ID): 1 A; Case Connection: SOURCE;

GS66508T-MR by Gan Systems is a N-CHANNEL FET for SWITCHING applications. It operates at 650V with 30A ID, suitable for VERY HIGH FREQUENCY BAND. This ENHANCEMENT MODE transistor in CHIP CARRIER package uses GALLIUM NITRIDE tech and can withstand -55 to 150 °C temperatures.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; No. of Terminals: 4; Minimum DS Breakdown Voltage: 65 V;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);

Wolfspeed's CGHV40100F is an N-CHANNEL RF FET with 150V DS breakdown voltage. Ideal for S BAND applications, it features GaN technology, 8.7A max drain current, and DEPLETION MODE operation in a FLANGE MOUNT package.