Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | MRF897 |
| Description | NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Collector Current (IC): 4 A; Maximum Collector-Base Capacitance: 28 pF; |
| Datasheet | MRF897 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 4 A |
| Configuration: | COMMON EMITTER, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 105 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CDFM-F4 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | EMITTER |
| Maximum Power Dissipation Ambient: | 105 W |
| Minimum Power Gain (Gp): | 10 dB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 30 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 30 V |
| Additional Features: | WITH EMITTER BALLASTING RESISTORS |
| Maximum Collector-Base Capacitance: | 28 pF |
