Nec Electronics America - NE3515S02-T1C-A

NE3515S02-T1C-A by Nec Electronics America

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Manufacturer Nec Electronics America
Manufacturer's Part Number NE3515S02-T1C-A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Maximum Drain Current (ID): .025 A; No. of Elements: 1;
Datasheet NE3515S02-T1C-A Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 11 dB
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: HETERO-JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .025 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 4 V
Qualification: Not Qualified
Terminal Position: UNSPECIFIED
Package Style (Meter): MICROWAVE
JESD-30 Code: R-PXMW-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: KU BAND
Case Connection: SOURCE
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