NXP Semiconductors - BLM7G1822S-80PB

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): SMALL OUTLINE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.4 W; Maximum Drain Current (Abs) (ID): 1 A; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 2.5 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Package Shape: ROUND; JEDEC-95 Code: TO-92;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 4; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Terminal Form: GULL WING;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

RF Small Signal Field-Effect Transistors; Surface Mount: YES; JESD-30 Code: R-XUUC-N4; Operating Mode: DEPLETION MODE; Package Style (Meter): UNCASED CHIP; Minimum DS Breakdown Voltage: 6 V;

SMMBFJ310LT1G by Onsemi is an N-CHANNEL RF Small Signal FET with a max power dissipation of 0.225W and a max operating temperature of 150°C. It is surface mountable and commonly used in junction field effect transistor applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; No. of Elements: 1; Terminal Form: NO LEAD;

Broadcom ATF-55143-TR2G is a N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band. It features 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C. The transistor's high electron mobility technology ensures efficient performance in small outline package style.

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Operating Mode: DEPLETION MODE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: JUNCTION; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; JESD-609 Code: e3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Case Connection: SOURCE; Terminal Position: SINGLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; Package Shape: RECTANGULAR;