Nec Electronics America - NE3210S01-T1

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .04 A; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Maximum Drain Current (ID): .055 A; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .055 A; Maximum Power Dissipation Ambient: .2 W;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Terminals: 3; Terminal Position: DUAL;

RF Small Signal Field-Effect Transistors;

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 30 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Power Dissipation Ambient: .725 W; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Highest Frequency Band: X BAND; Maximum Operating Temperature: 160 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Terminal Finish: TIN LEAD; JESD-609 Code: e0;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .12 A; No. of Elements: 1; Minimum Power Gain (Gp): 15 dB;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-609 Code: e3; Maximum Drain Current (ID): .03 A;

Broadcom ATF-38143-BLKG is a N-CHANNEL FET for X BAND applications. Features 15 dB Gp, 4.5 V DS Breakdown Voltage, and 0.58 W Power Dissipation. Ideal for RF AMPLIFIER circuits with DEPLETION MODE operation in SMALL OUTLINE package.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;