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| Manufacturer | Microsemi |
|---|---|
| Manufacturer's Part Number | 2N6080 |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A; |
| Datasheet | 2N6080 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 200 MHz |
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 1 A |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 12 W |
| Terminal Position: | RADIAL |
| Package Style (Meter): | POST/STUD MOUNT |
| JESD-30 Code: | O-XRPM-F4 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 5 |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 18 V |
| Additional Features: | HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS |
| Maximum Collector-Base Capacitance: | 20 pF |
