Microsemi - 2N3866A

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .3 W; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Collector Current (IC): .025 A; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Qualification: Not Qualified; No. of Terminals: 3;

BFR520T,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier transistor that operates in the L Band frequency range up to 9000 MHz. With a max power dissipation of 0.3 W and a max operating temperature of 150°C, it is suitable for various applications requiring high-frequency amplification.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 800 MHz; Terminal Form: GULL WING; No. of Terminals: 3;

NPN; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Transistor Element Material: SILICON;

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 30 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Maximum Power Dissipation Ambient: .3 W;

BFP540ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for S Band applications. With a max collector-emitter voltage of 4.5V and a nominal transition frequency of 30,000 MHz, it offers high performance in a small outline package.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Power Dissipation (Abs): 4.9 W; Maximum Collector Current (IC): .3 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel; Reference Standard: MIL-19500;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;