Onsemi - MMBTH17LT1

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.75 W; Maximum Collector Current (IC): .25 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Maximum Power Dissipation Ambient: .3 W;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;

MMBTH10-4LT1G by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 800MHz. Ideal for ultra-high frequency applications, it has a small outline package, matte tin finish, and operates up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Base Capacitance: 2.5 pF;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G4;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .03 A; Highest Frequency Band: KU BAND;

BFP740FESDH6327XTSA1 by Infineon Technologies is an NPN RF BJT with 14 dB power gain, ideal for X Band applications. It features a max operating temperature of 150°C, fT of 47 GHz, and a collector-emitter voltage of 4.2V. Suitable for amplifier circuits requiring high frequency performance in small outline packages.

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 46000 MHz; Maximum Collector Current (IC): .05 A; Transistor Application: AMPLIFIER;

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: GOLD;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;

NXP Semiconductors' BFR106,215 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.5W. It operates in the ultra-high frequency band at 5000MHz, ideal for amplifier applications. The small outline package with gull wing terminals makes it suitable for surface mount designs in various CECC standard circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Package Body Material: PLASTIC/EPOXY; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

The NXP Semiconductors BFT92T/R is a PNP RF BJT transistor with 3 terminals, ideal for amplifier applications in the UHF band. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. The package is a small outline with gull wing terminals and can operate up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;