Micron Technology - MT53D1024M32D4DT-053AAT:D

Micron Technology's MT40A256M16LY-062EAUT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, common I/O type, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.

IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 375 mA;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Supply Voltage (Vsup): 3.6 V;

Micron Technology's MT48LC16M16A2B4-6AAAT:G is a 16MX16 DRAM with 16777216 words, operating at 3.3V. It features synchronous operation, industrial temperature grade, and very thin profile package style. Ideal for applications requiring fast access time and high memory density in automotive electronics or industrial systems.

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

SYNCHRONOUS DRAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

LPDDR4 DRAM;

Micron Technology's MT40A256M16LY-062EAIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics due to AEC-Q100 screening level.

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

Micron Technology's MT41K256M16TW-107XIT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a grid array package style.

IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Input/Output Type: COMMON;

Alliance Memory's AS4C64M16D2A-25BCN is a 64MX16 DDR2 DRAM with 1.8V supply, operating from -40 to 85°C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

GDDR6 DRAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.2875 V;