Micron Technology - MT40A256M16GE-083EAUT:BTR

Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.

MT48LC16M16A2P-6A:D by Micron Technology is a 16MX16 Synchronous DRAM with a max clock frequency of 167 MHz. It operates at a nominal voltage of 3.3V and has a memory density of 268435456 bits. This memory IC type is commonly used in applications requiring high-speed data storage and retrieval.

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Terminal Position: BOTTOM;

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 4MX32;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Width: 6 mm; Technology: CMOS;

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

Kingston KVR16S11/8 is a DDR3 DRAM module with 1Gx64 organization, operating at 800MHz. It has a memory density of 68719476736 bits and operates at a voltage range of 1.425V to 1.575V. Ideal for applications requiring synchronous operation and common I/O type in microelectronic assemblies.

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR DRAM MODULE; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2; Additional Features: AUTO/SELF REFRESH; WD-MAX;

EDO DRAM;

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Maximum Access Time: 35 ns;

DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1200 MHz; No. of Functions: 1;

Micron Technology's MT53E128M32D2DS-046WT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in compact devices like smartphones and tablets.

AS4C16M16SA-6TCN by Alliance Memory is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 16777216 words memory density and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

Micron Technology's MT41K512M8DA-107AIT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With AEC-Q100 screening level, it offers synchronous operation and self-refresh capability.

DDR4 DRAM; Package Code: BGA; Package Shape: UNSPECIFIED; Memory Width: 32; No. of Ports: 1; No. of Functions: 1;

MT53E512M32D1ZW-046AUT:B by Micron Technology is a 512MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates synchronously, has a common input/output type, and is suitable for applications requiring high memory density and low power consumption.

Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;