NXP Semiconductors - BFQ234/1

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .45 A; Maximum Power Dissipation Ambient: 7.5 W; Highest Frequency Band: C BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT; Minimum Power Gain (Gp): 9 dB;

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: O-CRDB-F4; Terminal Position: RADIAL; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: FLAT; Qualification: Not Qualified;

RF Power Bipolar Transistors; Terminal Finish: Gold (Au); Qualification: Qualified; JESD-609 Code: e4;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 35 A;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;

NPN; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 7 dB; Qualification: Not Qualified; Terminal Position: DUAL;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2.6 A; Terminal Form: FLAT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.1 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 127 W; Maximum Collector Current (IC): 3.25 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14 W; Maximum Collector Current (IC): .75 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 2.3 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 50 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 12 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.4 A; Case Connection: BASE;