Hewlett Packard - MGA-86576-STR

SGA-3563 by RF Micro Devices is a wide band low power RF amplifier with a gain of 19.5 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and has a max input power of 18 dBm. This component, made of plastic/epoxy, is commonly used in RF and microwave applications.

WIDE BAND LOW POWER; JESD-609 Code: e4; Construction: COMPONENT; Gain: 10 dB; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 0 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 800 MHz;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 18 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Gain: 6 dB; Maximum Operating Frequency: 3000 MHz;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: MODULE,4LEAD,.45; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: 0 Cel;

Qorvo's SPF5122ZSR is a GAAS RF amplifier with 11.2 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 27 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, it features a surface-mount package with matte tin terminals.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 40 MHz;

WIDE BAND HIGH POWER; JESD-609 Code: e3; Maximum Input Power (CW): 25 dBm; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;

The NXP Semiconductors MMG15241HT1 is a wide band medium power RF amplifier with 14 dB gain, operating from 500 MHz to 2800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, drawing up to 105 mA. This component is designed for surface mount applications in RF and microwave systems.

HMC634LC4 by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating frequency range of 5-20 GHz. It features a max input power of 10 dBm, ceramic package body material, and gold over nickel terminal finish. Ideal for applications requiring high-frequency amplification in RF and microwave systems.

NARROW BAND LOW POWER;

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.

Analog Devices' HMC505LP4 is a RF amplifier with 24 terminals, operating from -40 to 85°C. It has a VSWR of 2, operates at frequencies b/w 6800-7400 MHz, and has a characteristic impedance of 50Ω. Ideal for narrowband low-power applications requiring surface mount technology.

HMC637ALP5E by Analog Devices is a wide band medium power RF amplifier with a gain of 12 dB. It has a max input power of 25 dBm and operates in temperatures ranging from -40 to 85°C. This component is suitable for applications requiring amplification in the frequency range of 0-6000 MHz.