International Rectifier - IRGPS60B120KDP

IRGPS60B120KDP by International Rectifier

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Manufacturer International Rectifier
Manufacturer's Part Number IRGPS60B120KDP
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 105 A; Terminal Position: SINGLE;
Datasheet IRGPS60B120KDP Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 105 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 45 ns
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
Nominal Turn Off Time (toff): 411 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 595 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 104 ns
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 58 ns
JEDEC-95 Code: TO-274AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
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