HGTG40N60B3 by Harris Semiconductor | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	Harris Semiconductor
Manufacturer's Part Number	HGTG40N60B3
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR;
Datasheet	HGTG40N60B3 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	70 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
Nominal Turn Off Time (toff):	350 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	290 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	435 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	290 W
Maximum Fall Time (tf):	200 ns
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2 V

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