Infineon Technologies - SFH309FA2

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 20 V; Nominal Light Current: .04 mA; Additional Features: DOUBLE END; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000008 s; Maximum Dark Current: 200 nA;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 200 nA; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; JESD-609 Code: e3;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .1 W; Maximum On State Current: .05 A; Maximum Response Time: .0000055 s; Peak Wavelength (nm): 850;

QSE213C by Fairchild Semiconductor is a single phototransistor with a peak wavelength of 880nm. It has a min operating temperature of -40°C and a max power dissipation of 0.1W. This optoelectronic component is commonly used in applications requiring infrared sensing or detection.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Infrared (IR) Range: YES; Maximum Dark Current: 25 nA; Additional Features: TTL COMPATIBLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 850; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: ROUND; Additional Features: SIDE VIEW;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000006 s; Peak Wavelength (nm): 850; Maximum Dark Current: 20 nA; Maximum Power Dissipation: .075 W;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: SQUARE; Packing Method: TR, 7 INCH; Maximum Dark Current: 50 nA;

Vishay Intertechnology's VEMT3700-GS08 is a 2.4mm single phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and min collector-emitter breakdown voltage of 70V. Ideal for surface mount applications in infrared range, it offers nominal light current of 0.5mA and max dark current of 200nA.

PHOTO TRANSISTOR;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: HIGH SENSITIVITY; Shape: ROUND; Maximum Power Dissipation: .15 W; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Terminal Finish: MATTE TIN OVER NICKEL; Size: 1.4 mm; Shape: RECTANGULAR; Infrared (IR) Range: NO; Peak Wavelength (nm): 570;

PHOTO TRANSISTOR; Peak Wavelength (nm): 900; Maximum Operating Temperature: 85 Cel; Size: 3.1 mm; Shape: ROUND; No. of Functions: 1;