Siemens - BPY62-4

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;

PHOTO DARLINGTON; Maximum Operating Temperature: 75 Cel; Shape: ROUND; Peak Wavelength (nm): 720; Minimum Collector-emitter Breakdown Voltage: 30 V; Infrared (IR) Range: NO;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 860; Maximum Response Time: .000007 s;

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.

PHOTO TRANSISTOR;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Maximum Response Time: .000008 s; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 75 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 720;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Terminal Finish: TIN SILVER COPPER; Maximum Operating Temperature: 85 Cel; Size: 1.4 mm; Peak Wavelength (nm): 600; Minimum Collector-emitter Breakdown Voltage: 20 V;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 900; Shape: ROUND; Maximum On State Current: .015 A;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 150 Cel; Peak Wavelength (nm): 880; Maximum Response Time: .000014 s; Minimum Operating Temperature: -55 Cel;

PHOTO DARLINGTON; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); Nominal Light Current: .9 mA; Configuration: SINGLE; Shape: ROUND; Additional Features: SIDE VIEW;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Peak Wavelength (nm): 880;

Photo Transistors; Maximum Response Time: .000125 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 70 Cel; Maximum On State Current: .0001 A; Maximum Power Dissipation: .09 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; Maximum On State Current: .05 A;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -60 Cel; Peak Wavelength (nm): 900; Maximum Response Time: .000008 s; Maximum Power Dissipation: .05 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 820;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0;