Infineon Technologies - S25FL064LABNFM013

S25FL512SAGMFI011 by Infineon Technologies is a NOR type flash memory with 64Mx8 organization, operating at 133MHz. It features a 100000 write/erase cycle endurance and SPI serial bus interface. Ideal for industrial applications requiring high-speed synchronous operation in a small outline package.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

Micron Technology's MT25QL128ABA8E12-0SITTR is a 16MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 100000 write/erase cycles endurance, and is ideal for applications requiring high-speed data storage.

SST26VF016B-104I/SN-RN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring high-speed synchronous operation and 100000 write/erase cycles. Operating temp range -40 to 85 °C with AEC-Q100 screening level.

FLASH; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA84,10X12,32;

Samsung's KLM8G1GETF-B0410 is a 8GX8 MLC NAND flash memory with 68719476736 bit density. Operating at 200 MHz, it has a very thin profile and fine pitch package style suitable for high-speed applications. With a voltage range of 1.7V to 1.95V, this CMOS technology chip is ideal for devices requiring fast data storage and retrieval.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Functions: 1;

Renesas Electronics' AT45DB041E-SSHN2B-T is a 4Mbit NOR Flash Memory with SPI interface, operating at 85MHz. It features 100,000 Write/Erase cycles and supports hardware/software write protection. Ideal for industrial applications requiring high endurance and reliable data storage in a compact small outline package.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 12.4 mm;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Power Supplies (V): 5;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

SST26VF064BT-104I/MF by Microchip is a 64M NOR Flash Memory with SPI serial bus, 104 MHz clock frequency, and 100000 write/erase cycles. Ideal for industrial applications requiring high endurance, it operates at -40 to 85 °C with a supply voltage range of 2.7V to 3.6V.

AT45DB081E-SSHN2B-T by Renesas Electronics is a NOR type flash memory with 1MX8 organization, SPI serial bus type, and 133 MHz max clock frequency. It is ideal for industrial applications requiring 100000 write/erase cycles, with a small outline package style and operating temperature range of -40 to 85 °C.

S29GL512T10TFI010 by Infineon Technologies is a 32MX16 flash memory with 536870912 bit density. It operates at 3V, has an access time of 100ns, and supports parallel mode. Ideal for industrial applications requiring high-speed data storage in compact devices.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Power Supplies (V): 3/3.3;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; JESD-609 Code: e4;

W25Q64JVSSIQ by Winbond Electronics is a NOR type flash memory with 8Mx8 organization, SPI serial bus type, and 133MHz clock frequency. It operates at 3.3V with 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact devices.