FS150R12KT3 by Infineon Technologies | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS150R12KT3
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 700 W; Maximum Collector Current (IC): 200 A; Nominal Turn On Time (ton): 340 ns;
Datasheet	FS150R12KT3 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	200 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	610 ns
No. of Terminals:	35
Maximum Power Dissipation (Abs):	700 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	340 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X35
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.15 V

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