IXYS Corporation - IXXH100N60B3

IXXH100N60B3 by IXYS Corporation

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Manufacturer IXYS Corporation
Manufacturer's Part Number IXXH100N60B3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 210 A; Nominal Turn On Time (ton): 92 ns;
Datasheet IXXH100N60B3 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 210 A
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 350 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 830 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 92 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: AVALANCHE RATED
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
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