Broadcom - HSDL-5420-OPTION-011

PIN PHOTODIODE; Maximum Dark Current: 40 nA; Configuration: SINGLE; No. of Functions: 1; Shape: RECTANGULAR; Nominal Light Current: .04 mA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Maximum Reverse Voltage: 50 V; Maximum Response Time: .000000005 s;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 25 nA;

PIN PHOTODIODE; Size: 2.73 mm; Shape: SQUARE; Minimum Reverse Breakdown Voltage: 60 V; Nominal Light Current: .038 mA; No. of Functions: 1;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Minimum Reverse Breakdown Voltage: 24.2 V; Minimum Operating Temperature: -40 Cel; Configuration: COMPLEX;

BPW34FAS by Infineon Technologies is a PIN photodiode with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max dark current of 30nA and a max response time of 20ns. This photodiode is commonly used in applications such as light detection, optical communication, and industrial automation.

PIN PHOTODIODE; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 1000; Infrared (IR) Range: YES; Minimum Operating Temperature: -40 Cel; Shape: ROUND;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Semiconductor Material: InGaAs; Maximum Reverse Voltage: 120 V; Maximum Operating Temperature: 60 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 20 V; Maximum Response Time: .0000000000003 s; Semiconductor Material: InGaAs;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; No. of Functions: 1; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880; Size: 5 mm;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Reverse Voltage: 45 V; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Germanium;

Photo Diodes; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Dark Current: 3 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 50 V; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Semiconductor Material: Silicon; Maximum Dark Current: .05 nA;

Photo Diodes;

Photo Diodes; Nominal Light Current: .0023 mA; Additional Features: HIGH RELIABILITY, LOW NOISE; Peak Wavelength (nm): 850; Maximum Dark Current: .015 nA; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Semiconductor Material: Silicon; Shape: RECTANGULAR;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Minimum Reverse Breakdown Voltage: 40 V; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel; Size: 1.53 mm;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: InGaAs; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 940; Configuration: SINGLE; Nominal Light Current: .08 mA; Size: 2.65 mm;