Hittite Microwave - HMC3653LP3BE

WIDE BAND MEDIUM POWER; JESD-609 Code: e3; Gain: 23 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;

Analog Devices' HMC8325-SX is a PHEMT RF amplifier with 22 terminals, operating from 71-86 GHz. It offers a gain of 19.5 dB and requires a 3V power supply, drawing a max current of 50 mA. Ideal for wideband low-power applications in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3/5;

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Minimum Operating Frequency: 3000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 15 dBm; JESD-609 Code: e3;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Screening Level: AEC-Q100;

MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

WIDE BAND LOW POWER; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8000 MHz; Characteristic Impedance: 50 ohm; Gain: 20 dB;

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 100 MHz; Maximum Operating Frequency: 4000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 27 dBm; Gain: 6.4 dB;

WIDE BAND LOW POWER; Gain: 14.5 dB; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 700 MHz; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN; Power Supplies (V): 3;

WIDE BAND LOW POWER; Gain: 16.3 dB; Terminal Finish: Tin (Sn); Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 150 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: Matte Tin (Sn);

PMA3-83LNW+ by Mini-circuits is a wide band low power RF amplifier with a gain of 16.9 dB. It operates at frequencies ranging from 400 MHz to 8000 MHz and has a max input power of 16 dBm. This amplifier is commonly used in applications requiring amplification in the RF and microwave range.

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 2000 MHz; Maximum Voltage Standing Wave Ratio: 2; Construction: COAXIAL; Maximum Operating Frequency: 4000 MHz; Gain: 32 dB;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Power Supplies (V): 3;