Infineon Technologies - FF600R12ME4PB11BOSA1

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 735 W; Maximum Collector Current (IC): 160 A; Maximum Collector-Emitter Voltage: 1700 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 160 A; No. of Elements: 1;

IRG4PC30KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 28A. It is designed for MOTOR CONTROL applications, featuring a nominal turn-off time of 380ns and a max power dissipation of 42W.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 33 W; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0;

IRG4BC20WPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 60W. It has a nominal turn-off time of 300ns, making it ideal for motor control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-temperature environments up to 150°C.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 27 A; JESD-30 Code: R-XUFM-X23; Nominal Turn Off Time (toff): 250 ns;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 170 A; Package Style (Meter): IN-LINE;

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2550 W; Maximum Collector Current (IC): 900 A; Maximum Collector-Emitter Voltage: 1200 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 321 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 28 A; Maximum Gate-Emitter Voltage: 20 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; No. of Terminals: 5; Terminal Position: UPPER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-247AD;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Maximum Operating Temperature: 150 Cel;

FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 180 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 20 A; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): 10;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; JESD-609 Code: e3;