Freescale Semiconductor - MRF6VP3450HR5

  1. Home
  2. Freescale Semiconductor - MRF6VP3450HR5
MRF6VP3450HR5 by Freescale Semiconductor

Image shown is a representation only.

Manufacturer Freescale Semiconductor
Manufacturer's Part Number MRF6VP3450HR5
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Operating Temperature: 225 Cel;
Datasheet MRF6VP3450HR5 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 110 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SD2931 by STMicroelectronics

SD2931

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 292 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
A2T21S260W12NR3 by NXP Semiconductors

A2T21S260W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
BLF6G20-75 by NXP Semiconductors

BLF6G20-75

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Transistor Element Material: SILICON;
TRF7000PK by Texas Instruments

TRF7000PK

Texas Instruments

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: FLAT; Maximum Power Dissipation Ambient: 4 W;
934066857112 by NXP Semiconductors

934066857112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Highest Frequency Band: L BAND; Terminal Form: FLAT;
AFT05MS004NT1 by NXP Semiconductors

AFT05MS004NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
CGHV40100F by Wolfspeed

CGHV40100F

Wolfspeed

Wolfspeed's CGHV40100F is an N-CHANNEL RF FET with 150V DS breakdown voltage. Ideal for S BAND applications, it features GaN technology, 8.7A max drain current, and DEPLETION MODE operation in a FLANGE MOUNT package.
PD85015TRM-E by STMicroelectronics

PD85015TRM-E

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934065607112 by NXP Semiconductors

934065607112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
RF2L27015CG2 by STMicroelectronics

RF2L27015CG2

STMicroelectronics

RF Power Field-Effect Transistors;
A5G23H065NT4 by NXP Semiconductors

A5G23H065NT4

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: GALLIUM NITRIDE; Maximum Operating Temperature: 150 Cel;
MRFE6VP61K25HR5 by Freescale Semiconductor

MRFE6VP61K25HR5

Freescale Semiconductor

N-CHANNEL; Maximum Power Dissipation (Abs): 1300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 225 Cel; Peak Reflow Temperature (C): 260;
PD85050S by STMicroelectronics

PD85050S

STMicroelectronics

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRF134 by Asi Semiconductor

MRF134

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Package Shape: ROUND; Maximum Drain Current (Abs) (ID): .9 A;
PD84006-E by STMicroelectronics

PD84006-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Case Connection: SOURCE; Moisture Sensitivity Level (MSL): 3;
PD55003TR-E by STMicroelectronics

PD55003TR-E

STMicroelectronics

STMicroelectronics PD55003TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, 31.7W Power Dissipation, and operates up to 165°C temperature.
934061847112 by NXP Semiconductors

934061847112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-CDFP-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLF246,112 by NXP Semiconductors

BLF246,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Terminal Form: FLAT;
VRF157FL by Microchip Technology

VRF157FL

Microchip Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 170 V;
PTVA101K02EVV1R250XTMA1 by Wolfspeed

PTVA101K02EVV1R250XTMA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;