Ampleon Netherlands B V - BLF871S,112

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Package Style (Meter): FLATPACK; Maximum Drain Current (ID): 20 A;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-CDFM-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Operating Temperature: 225 Cel;

N-CHANNEL; Maximum Power Dissipation (Abs): 625 W; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Highest Frequency Band: L BAND; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 625 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 40 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Maximum Operating Temperature: 165 Cel; Minimum DS Breakdown Voltage: 40 V;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: S-PQCC-N12; Maximum Drain Current (ID): 2.5 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 245; Highest Frequency Band: L BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK;