Panjit International - BC817DPN-AU_R1_000A1

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;

BC857BS,115 by NXP Semiconductors is a PNP BJT transistor with 2 elements for switching applications. It has a hFE of 200, VCEO of 45V, and IC of 0.1A. This surface-mount transistor operates up to 150°C and has a transition frequency of 100MHz.

Infineon BC847BE6327HTSA1 is a NPN BJT transistor with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C. This surface-mount device has Gull Wing terminals in a small outline package.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-92;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Maximum Turn On Time (ton): 70 ns;

2N2219A by Space Power Electronics is a NPN small signal BJT transistor with a max power dissipation of 0.8W and a min DC current gain of 30. It is commonly used in applications requiring high frequency performance, such as RF amplifiers and oscillators.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

Infineon's SMBT3904E6327HTSA1 is a NPN BJT transistor with max. power dissipation of 0.33W, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its small outline package style and max. collector-emitter voltage of 40V.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; Package Body Material: METAL; Terminal Form: WIRE;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

SBC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.38W, hFE of 420, and Vce of 45V. With a package style of small outline and surface mount capability, it operates b/w -55 to 150°C.