Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
PBSS5220T-Q	Nexperia																					TIN			1			e3	30	260	AEC-Q101
BC858W-QX	Nexperia	PNP	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	125	150 Cel	3 pF	SILICON	30 V	-65 Cel		DUAL	R-PDSO-G3							AEC-Q101; IEC-60134
BC858W-QF	Nexperia	PNP	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	125	150 Cel	3 pF	SILICON	30 V	-65 Cel		DUAL	R-PDSO-G3							AEC-Q101; IEC-60134
MMBTA42-Q	Nexperia	NPN	SINGLE	YES	50 MHz	.25 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.5 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	40	150 Cel		SILICON	300 V	-65 Cel	TIN	DUAL	R-PDSO-G3	1			e3	30	260	AEC-Q101; IEC-60134
PMBT5551-Q	Nexperia	NPN	SINGLE	YES	300 MHz	.25 W	.3 A	PLASTIC/EPOXY		.2 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	30	150 Cel	6 pF	SILICON	160 V	-65 Cel	TIN	DUAL	R-PDSO-G3	1		TO-236AB	e3	30	260	AEC-Q101; IEC-60134
PBSS5350Z-Q	Nexperia																					TIN			1			e3	30	260	AEC-Q101
MMBT3904-Q	Nexperia																														AEC-Q101
PBHV9050T-Q	Nexperia	PNP	SINGLE	YES	50 MHz	.3 W	.15 A	PLASTIC/EPOXY	SWITCHING	.2 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	100	150 Cel	6 pF	SILICON	500 V	-55 Cel	TIN	DUAL	R-PDSO-G3	1			e3	30	260	AEC-Q101; IEC-60134
BC53-10PAS-Q	Nexperia																					TIN			1			e3	30	260	AEC-Q101
PUMD4-Q	Nexperia	NPN AND PNP	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.15 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	200	150 Cel	2.5 pF	SILICON	50 V	-65 Cel		DUAL	R-PDSO-G6		BUILT IN BIAS RESISTOR					AEC-Q101; IEC-60134
BC53-16PAS-Q	Nexperia																					TIN			1			e3	30	260	AEC-Q101
BC53PAS-Q	Nexperia																					TIN			1			e3	30	260	AEC-Q101
PBSS4041NZ-Q	Nexperia																					TIN			1			e3	30	260	AEC-Q101
PMBTA44-QR	Nexperia																														AEC-Q101
BC817-25/DG/B4R	Nexperia
PUMH15-Q	Nexperia																					TIN			1			e3	30	260	AEC-Q101
PBSS4330PAS-QX	Nexperia																														AEC-Q101; IEC-60134
PBSS5160U-QX	Nexperia
BC817K-25VL	Nexperia																					Tin (Sn)			1			e3			AEC-Q101
PUMH1-Q	Nexperia	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES	230 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.15 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	60	150 Cel	2.5 pF	SILICON	50 V	-55 Cel		DUAL	R-PDSO-G6		BUILT IN BIAS RESISTOR RATIO IS 1					AEC-Q101; IEC-60134
PEMD4-QX	Nexperia
BC807-40/DG/B4R	Nexperia
PBSS4140DPN-QF	Nexperia
PBSS5350D-QX	Nexperia																														AEC-Q101
PBSS5360Z-QX	Nexperia																														AEC-Q101
PMBT2907A/DLTR	Nexperia
PUMH2,165	Nexperia
PUMH2,125	Nexperia
PUMH2,135	Nexperia
PDTA124ET-Q	Nexperia																														AEC-Q101
PUMD16-Q	Nexperia
PBSS4160QA-Q	Nexperia
PUMD15-Q	Nexperia
PBSS5250TH-Q	Nexperia
PMST5551-Q	Nexperia
BCV27-Q	Nexperia	NPN	DARLINGTON	YES		.25 W	.5 A	PLASTIC/EPOXY	AMPLIFIER	1 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	4000	150 Cel		SILICON	30 V	-65 Cel		DUAL	R-PDSO-G3							AEC-Q101; IEC-60134
2PB709ASL-Q	Nexperia	PNP	SINGLE	YES	80 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	290	150 Cel	5 pF	SILICON	45 V	-55 Cel		DUAL	R-PDSO-G3							AEC-Q101; IEC-60134
BC850C-Q	Nexperia	NPN	SINGLE	YES	100 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	420	150 Cel	2.5 pF	SILICON	45 V	-65 Cel		DUAL	R-PDSO-G3							AEC-Q101; IEC-60134
PIMC31-Q	Nexperia
PMBT3904-Q	Nexperia

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395