Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BCP55-16,115	NXP Semiconductors	NPN	SINGLE	YES	130 MHz	1.5 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	1.5 W	100	150 Cel		SILICON	60 V			TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
ZTX853	Diodes Incorporated	NPN	SINGLE	NO	130 MHz		4 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	3	IN-LINE	Other Transistors		100	200 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSIP-W3			Not Qualified			e3	30	260
BD682S	Onsemi	PNP	DARLINGTON	NO		40 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		750	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-126	e3
BD13616STU	Onsemi	PNP	SINGLE	NO	75 MHz	13 W	1.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		100	150 Cel		SILICON	45 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-126	e3
NSVBCP69T1G	Onsemi	PNP	SINGLE	YES		1.5 W	1 A						1			Other Transistors		85	150 Cel						MATTE TIN			1					e3	30	260
ZTX951STOA	Diodes Incorporated	PNP	SINGLE	NO	120 MHz		4 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	3	IN-LINE			10			SILICON	60 V			MATTE TIN	SINGLE	R-PSIP-W3	1		Not Qualified			e3		260
BCX5316H6327XTSA1	Infineon Technologies	PNP	SINGLE	YES		2 W	1 A						1			Other Transistors		100	150 Cel						TIN			1					e3		245
TIP122-BP	Micro Commercial Components	NPN	DARLINGTON	NO			5 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT			1000			SILICON	100 V			Matte Tin (Sn)	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3	10	260
BDX53CG	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO	20 MHz	60 W	8 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		750	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e3
FZT749TA	Diodes Incorporated	PNP	SINGLE	YES	160 MHz	3 W	3 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		15	150 Cel		SILICON	25 V			MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
STN790A	STMicroelectronics	PNP	SINGLE	YES	100 MHz	1.6 W	3 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		90	150 Cel		SILICON	30 V			Matte Tin (Sn) - annealed	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
MJE182G	Onsemi	NPN	SINGLE	NO	50 MHz	1.5 W	3 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		12	150 Cel		SILICON	80 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-225AA	e3
TIP107G	Onsemi	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO	4 MHz	80 W	8 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		200	150 Cel		SILICON	100 V			TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e3
TIP31CTU	Onsemi	NPN	SINGLE	NO	3 MHz	30 W	3 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FZT651TA	Diodes Incorporated	NPN	SINGLE	YES	175 MHz	3 W	3 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	60 V			MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
MJD45H11RLG	Onsemi	PNP	SINGLE	YES	90 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	80 V			MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260
TIP31C-BP	Micro Commercial Components	NPN	SINGLE	NO	3 MHz		3 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT			25	150 Cel		SILICON	100 V			Matte Tin (Sn)	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3	10	260
TIP142TTU	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		80 W	10 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
TIP42CTU	Onsemi	PNP	SINGLE	NO	3 MHz	65 W	6 A	PLASTIC/EPOXY	SWITCHING	1.5 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors	2 W	15	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
TIP50G	Onsemi	NPN	SINGLE	NO	10 MHz	40 W	1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel		SILICON	400 V			TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e3
BD678AS	Onsemi	PNP	DARLINGTON	NO		40 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		750	150 Cel		SILICON	60 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-126	e3
2N6107	Onsemi	PNP	SINGLE	NO	10 MHz	40 W	7 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		30	150 Cel		SILICON	70 V			Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e0	30	235
NJVMJD50T4G	Onsemi	NPN	SINGLE	YES	10 MHz		1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE			10	150 Cel		SILICON	400 V	-65 Cel		MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	AEC-Q101
BD237G	Onsemi	NPN	SINGLE	NO	3 MHz	25 W	2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		25	150 Cel		SILICON	80 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-225AA	e3
TIP32CTU	Onsemi	PNP	SINGLE	NO	3 MHz	40 W	3 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel		SILICON	100 V			Tin (Sn)	SINGLE	R-PSFM-T3					TO-220AB	e3
FZT790A	Onsemi	PNP	SINGLE	YES	100 MHz	2 W	3 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		150	150 Cel		SILICON	40 V			MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
MJ11016G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO	4 MHz	200 W	30 A	METAL	AMPLIFIER		PIN/PEG	ROUND	1	2	FLANGE MOUNT	Other Transistors		200	200 Cel		SILICON	120 V	-55 Cel		MATTE TIN	BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified		TO-204AA	e3
TIP29CG	Onsemi	NPN	SINGLE	NO	3 MHz	30 W	1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		15	150 Cel		SILICON	100 V			TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3
BD135G	Onsemi	NPN	SINGLE	NO		12.5 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		25	150 Cel		SILICON	45 V	-55 Cel		MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-225AA	e3
NJVMJD45H11T4G-VF01	Onsemi	PNP	SINGLE	YES	90 MHz		8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE			40	150 Cel		SILICON	80 V	-55 Cel		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	AEC-Q101
TIP36CG	Onsemi	PNP	SINGLE	NO	3 MHz	125 W	25 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		15	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3
BCP54-16,115	NXP Semiconductors	NPN	SINGLE	YES	130 MHz	1.5 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	1.5 W	100	150 Cel		SILICON	45 V			TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
NJW0302G	Onsemi	PNP	SINGLE	NO	30 MHz	150 W	15 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		75	150 Cel		SILICON	250 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified			e3
BCX5610TA	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE			63	150 Cel	25 pF	SILICON	80 V	-55 Cel		MATTE TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260
MJ15003	Onsemi	NPN	SINGLE	NO	2 MHz	250 W	20 A	METAL	AMPLIFIER		PIN/PEG	ROUND	1	2	FLANGE MOUNT	Other Transistors		25	200 Cel		SILICON	140 V			Tin/Lead (Sn/Pb)	BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified		TO-204AA	e0	30	235
TIP147TTU	Onsemi	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		80 W	10 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
ZTX851STZ	Diodes Incorporated	NPN	SINGLE	NO	130 MHz		5 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	3	IN-LINE			25			SILICON	60 V			MATTE TIN	SINGLE	R-PSIP-W3			Not Qualified			e3	30	260
2N6284G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO	4 MHz	160 W	20 A	METAL	AMPLIFIER		PIN/PEG	ROUND	1	2	FLANGE MOUNT	Other Transistors		100	200 Cel		SILICON	100 V			MATTE TIN	BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified		TO-204AA	e3
BCP53-10T1G	Onsemi	PNP	SINGLE	YES	50 MHz	1.5 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		63	150 Cel		SILICON	80 V	-65 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	40	260
BUF420AW	STMicroelectronics	NPN	SINGLE	NO		200 W	30 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors			150 Cel		SILICON	450 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
SBCP68T1G	Onsemi	NPN	SINGLE	YES	60 MHz	1.5 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		60	150 Cel		SILICON	20 V	-65 Cel		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261	e3	30	260	AEC-Q101
BD679G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		40 W	4 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		750	150 Cel		SILICON	80 V			MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-225AA	e3
BUL216	STMicroelectronics	NPN	SINGLE	NO		70 W	4 A	PLASTIC/EPOXY	SWITCHING	3 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors	90 W	12	150 Cel		SILICON	800 V		4020 ns	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
ZXTP2012ZTA	Diodes Incorporated	PNP	SINGLE	YES	120 MHz	2.1 W	4.3 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel		SILICON	60 V			Matte Tin (Sn)	SINGLE	R-PSFM-F3	1	COLLECTOR	Not Qualified			e3	30	260
TIP35CP	STMicroelectronics	NPN	SINGLE	NO	3 MHz	125 W	25 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel		SILICON	100 V				SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BDW94CFP	STMicroelectronics	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		30 W	12 A	PLASTIC/EPOXY	SWITCHING	3 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors	33 W	100	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
MJD122TF	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES		20 W	8 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	100 V			MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
2N3441	Microchip Technology	NPN	SINGLE	NO		25 W	3 A	METAL	SWITCHING		PIN/PEG	ROUND	1	2	FLANGE MOUNT	Other Transistors		10	200 Cel		SILICON	140 V			TIN LEAD	BOTTOM	O-MBFM-P2			Not Qualified		TO-213AA	e0

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.