Insulated Gate Bipolar Transistors (IGBT)
| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
NO |
312 W |
50 A |
90 ns |
180 ns |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
7.5 V |
Matte Tin (Sn) - annealed |
e3 |
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|
|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
500 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
810 ns |
29 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X29 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
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|
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1630 W |
340 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
143 ns |
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|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
69 W |
10 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
3.6 V |
GULL WING |
RECTANGULAR |
1 |
159.6 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
25 V |
4.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
30 |
245 |
44.8 ns |
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|
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1630 W |
380 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
395 ns |
3 |
IN-LINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
e3 |
140 ns |
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|
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
397 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
61 ns |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
64 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
165 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-264AA |
e3 |
45 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
53 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
279 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
38 ns |
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|
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
36.4 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
81 ns |
172.5 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
43.7 ns |
AEC-Q101 |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
36.4 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
81 ns |
172.5 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
43.7 ns |
AEC-Q101 |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
28 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
305 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
205 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
35 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
357 ns |
3 |
IN-LINE |
SILICON |
1200 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
TO-274AA |
NOT SPECIFIED |
NOT SPECIFIED |
115 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
6 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
354 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G2 |
3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-252AA |
e3 |
34 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
NO |
268 W |
76 A |
42 ns |
54 ns |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
6.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
455 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7.5 V |
SINGLE |
R-PSFM-T4 |
TO-247 |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
401 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SWITCHING SPEED |
TO-247AD |
e3 |
69 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
178 W |
40 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
46 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
65 ns |
313 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
66 ns |
||||||||||||||||||
|
Infineon Technologies |
4800 W |
250 A |
3.4 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
6500 V |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
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|
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
150 W |
43 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
350 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
6.2 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
375 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
40 ns |
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|
|
Onsemi |
N-CHANNEL |
NO |
312 W |
25 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
7.5 V |
MATTE TIN |
e3 |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
210 ns |
660 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-247AC |
e3 |
86 ns |
|||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
55 A |
UNSPECIFIED |
POWER CONTROL |
WIRE |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-W24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
63 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
550 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
85 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
750 ns |
13 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-XUFM-X13 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
60 ns |
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|
|
Semikron International |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
220 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
4000 ns |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
370 V |
12 V |
2.2 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
LOW SATURATION VOLTAGE |
TO-263AB |
e3 |
30 |
260 |
3700 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
595 W |
105 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
45 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
58 ns |
411 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
TO-274AA |
NOT SPECIFIED |
NOT SPECIFIED |
104 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
454 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
81 ns |
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|
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
290 W |
88 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
350 ns |
4 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747; UL RECOGNIZED |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
414 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
|||||||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
180 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
1530 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AA |
e3 |
10 |
260 |
66 ns |
|||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
16.5 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
520 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
56 ns |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
ULTRA FAST |
TO-247 |
e3 |
42.5 ns |
|||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
395 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
215 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
61 ns |
|||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
398 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
84 ns |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
105 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
28 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
39 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
245 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
42 ns |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
620 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
69 ns |
|||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
83 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
490 ns |
18 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X18 |
NOT SPECIFIED |
NOT SPECIFIED |
185 ns |
|||||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
NO |
168 W |
40 A |
Insulated Gate BIP Transistors |
175 Cel |
650 V |
20 V |
7 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
995 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
770 ns |
7 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
310 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
1450 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
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|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
330 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.85 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
520 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
750 W |
150 A |
UNSPECIFIED |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
605 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
165 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.